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? semiconductor components industries, llc, 2012 october, 2012 ? rev. 3 1 publication order number: ncv8405/d ncv8405, NCV8405A self-protected low side driver with temperature and current limit ncv8405/a is a three terminal protected low ? side smart discrete device. the protection features include overcurrent, overtemperature, esd and integrated drain ? to ? gate clamping for overvoltage protection. this device is suitable for harsh automotive environments. features ? short ? circuit protection ? thermal shutdown with automatic restart ? overvoltage protection ? integrated clamp for inductive switching ? esd protection ? dv/dt robustness ? analog drive capability (logic level input) ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q100 qualified and ppap capable ? these devices are pb ? free and are rohs compliant typical applications ? switch a variety of resistive, inductive and capacitive loads ? can replace electromechanical relays and discrete circuits ? automotive / industrial http://onsemi.com *max current limit value is dependent on input condition. sot ? 223 case 318e style 3 marking diagram v (br)dss (clamped) r ds(on) typ i d max 42 v 90 m @ 10 v 6.0 a* a = assembly location y = year w, ww = work week xxxxx = v8405 or 8405a g or = pb ? free package 1 (note: microdot may be in either location) 1 ayw xxxxx 23 4 gate drain source drain 2 3 4 see detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. ordering information drain source temperature limit gate input current limit current sense overvoltage protection esd protection 1 2 3 4 dpak case 369c yww xxxxxg
ncv8405, NCV8405A http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage internally clamped v dss 42 v drain ? to ? gate voltage internally clamped (r g = 1.0 m ) v dgr 42 v gate ? to ? source voltage v gs 14 v continuous drain current i d internally limited power dissipation ? sot ? 223 version @ t a = 25 c (note 1) @ t a = 25 c (note 2) @ t t = 25 c (note 1) power dissipation ? dpak version @ t a = 25 c (note 1) @ t a = 25 c (note 2) @ t c = 25 c (note 1) p d 1.0 1.7 11.4 2.0 2.5 40 w thermal resistance ? sot ? 223 version junction ? to ? ambient steady state (note 1) junction ? to ? ambient steady state (note 2) junction ? to ? tab steady state (note 1) thermal resistance ? dpak version junction ? to ? ambient steady state (note 1) junction ? to ? ambient steady state (note 2) junction ? to ? case steady state (note 1) r ja r ja r jt r ja r ja r jt 130 72 11 60 50 3.0 c/w single pulse drain ? to ? source avalanche energy (v dd = 40 v, v g = 5.0 v, i pk = 2.8 a, l = 80 mh, r g(ext) = 25 , tj = 25 c) e as 275 mj load dump voltage v ld = v a + v s (v gs = 0 and 10 v, r i = 2.0 , r l = 6.0 , t d = 400 ms) v ld 53 v operating junction temperature t j ? 40 to 150 c storage temperature t stg ? 55 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. surface ? mounted onto min pad fr4 pcb, (2 oz. cu, 0.06 thick). 2. surface ? mounted onto 2 sq. fr4 board (1 sq., 1 oz. cu, 0.06 thick). drain source gate vds vgs i d i g + ? + ? figure 1. voltage and current convention
ncv8405, NCV8405A http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise noted) parameter test condition symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (note 3) v gs = 0 v, i d = 10 ma, t j = 25 c v (br)dss 42 46 51 v v gs = 0 v, i d = 10 ma, t j = 150 c (note 5) 42 45 51 zero gate voltage drain current v gs = 0 v, v ds = 32 v, t j = 25 c i dss 0.5 2.0 a v gs = 0 v, v ds = 32 v, t j = 150 c (note 5) 2.0 10 gate input current v ds = 0 v, v gs = 5.0 v i gssf 50 100 a on characteristics (note 3) gate threshold voltage v gs = v ds , i d = 150 a v gs(th) 1.0 1.6 2.0 v gate threshold temperature coefficient v gs(th) /t j 4.0 ? mv/ c static drain ? to ? source on ? resistance v gs = 10 v, i d = 1.4 a, t j = 25 c r ds(on) 90 100 m v gs = 10 v, i d = 1.4 a, t j = 150 c (note 5) 165 190 v gs = 5.0 v, i d = 1.4 a, t j = 25 c 105 120 v gs = 5.0 v, i d = 1.4 a, t j = 150 c (note 5) 185 210 v gs = 5.0 v, i d = 0.5 a, t j = 25 c 105 120 v gs = 5.0 v, i d = 0.5 a, t j = 150 c (note 5) 185 210 source ? drain forward on voltage v gs = 0 v, i s = 7.0 a v sd 1.05 v switching characteristics (note 5) turn ? on time (10% v in to 90% i d ) v gs = 10 v, v dd = 12 v i d = 2.5 a, r l = 4.7 t on 20 s turn ? off time (90% v in to 10% i d ) t off 110 slew ? rate on (70% v ds to 50% v ds ) v gs = 10 v, v dd = 12 v, r l = 4.7 ? dv ds /dt on 1.0 v s slew ? rate off (50% v ds to 70% v ds ) dv ds /dt off 0.4 self protection characteristics (t j = 25 c unless otherwise noted) (note 4) current limit v ds = 10 v, v gs = 5.0 v, t j = 25 c i lim 6.0 9.0 11 a v ds = 10 v, v gs = 5.0 v, t j = 150 c (note 5) 3.0 5.0 8.0 v ds = 10 v, v gs = 10 v, t j = 25 c 7.0 10.5 13 v ds = 10 v, v gs = 10 v, t j = 150 c (note 5) 4.0 7.5 10 temperature limit (turn ? off) v gs = 5.0 v (note 5) t lim(off) 150 180 200 c thermal hysteresis v gs = 5.0 v t lim(on) 15 temperature limit (turn ? off) v gs = 10 v (note 5) t lim(off) 150 165 185 thermal hysteresis v gs = 10 v t lim(on) 15 gate input characteristics (note 5) device on gate input current v gs = 5 v i d = 1.0 a i gon 50 a v gs = 10 v i d = 1.0 a 400 current limit gate input current v gs = 5 v, v ds = 10 v i gcl 0.05 ma v gs = 10 v, v ds = 10 v 0.4 thermal limit fault gate input current v gs = 5 v, v ds = 10 v i gtl 0.22 ma v gs = 10 v, v ds = 10 v 1.0 esd electrical characteristics (t j = 25 c unless otherwise noted) (note 5) electro ? static discharge capability human body model (hbm) esd 4000 v machine model (mm) 400 3. pulse test: pulse width 300 s, duty cycle 2%. 4. fault conditions are viewed as beyond the normal operating range of the part. 5. not subject to production testing.
ncv8405, NCV8405A http://onsemi.com 4 typical performance curves 8 v 1 10 10 100 figure 2. single pulse maximum switch ? off current vs. load inductance l (mh) i l(max) (a) t jstart = 25 c t jstart = 150 c 10 100 1000 10 10 0 figure 3. single pulse maximum switching energy vs. load inductance l (mh) e max (mj) t jstart = 25 c t jstart = 150 c 1 10 100 110 figure 4. single pulse maximum inductive switch ? off current vs. time in clamp time in clamp (ms) i l(max) (a) t jstart = 25 c t jstart = 150 c 10 100 1000 110 figure 5. single pulse maximum inductive switching energy vs. time in clamp time in clamp (ms) e max (mj) t jstart = 25 c t jstart = 150 c figure 6. output characteristics v ds = 10 v 25 c 100 c 150 c ? 40 c i d (a) v gs (v) figure 7. transfer characteristics v ds (v) i d (a) v gs = 2.5 v 3 v 4 v 5 v 6 v 10 v t a = 25 c 0 2 4 6 8 10 12 14 012345 7 v 9 v 0 2 4 6 8 10 12 12345
ncv8405, NCV8405A http://onsemi.com 5 typical performance curves figure 8. r ds(on) vs. gate ? source voltage v gs (v) r ds(on) (m ) 150 c, i d = 0.5 a 150 c, i d = 1.4 a 100 c, i d = 0.5 a 100 c, i d = 1.4 a 25 c, i d = 0.5 a 25 c, i d = 1.4 a ? 40 c, i d = 0.5 a ? 40 c, i d = 1.4 a figure 9. r ds(on) vs. drain current i d (a) r ds(on) (m ) v gs = 5 v v gs = 10 v i d = 1.4 a figure 10. normalized r ds(on) vs. temperature t ( c) r ds(on) (vgs = 5 v, tj = 25 c)(normalized) 25 c 100 c 150 c ? 40 c figure 11. current limit vs. gate ? source voltage v gs (v) i lim (a) v ds = 10 v figure 12. current limit vs. junction temperature t j ( c) i lim (a) v ds = 10 v v gs = 5 v v gs = 10 v figure 13. drain ? to ? source leakage current v ds (v) i dss ( a) v gs = 0 v 25 c 100 c 150 c ? 40 c 50 100 150 200 250 300 345678910 50 70 90 110 130 150 170 190 210 ? 40 c, v gs = 5 v ? 40 c, v gs = 10 v 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 25 c, v gs = 5 v 25 c, v gs = 10 v 100 c, v gs = 5 v 100 c, v gs = 10 v 150 c, v gs = 10 v 150 c, v gs = 10 v 0.5 0.75 1.0 1.25 1.5 1.75 2.0 ? 40 ? 20 0 20 40 60 80 100 120 140 3 5 7 9 11 13 15 567891 0 4 6 8 10 12 14 ? 40 ? 20 0 20 40 60 80 100 120 140 160 0.001 0.01 0.1 1 10 10 15 20 25 30 35 40
ncv8405, NCV8405A http://onsemi.com 6 typical performance curves drain ? source voltage slope (v/ s) 0.6 0.7 0.8 0.9 1 1.1 1.2 ? 40 ? 20 0 20 40 60 80 100 120 140 figure 14. normalized threshold voltage vs. temperature t ( c) normalized v gs(th) (v) i d = 150 a v gs = v ds figure 15. body ? diode forward characteristics i s (a) v sd (v) 25 c 100 c 150 c ? 40 c v gs = 0 v t d(off) t d(on) t f t r figure 16. resistive load switching time vs. gate ? source voltage v gs (v) time ( s) i d = 2.5 a v dd = 12 v r g = 0 figure 17. resistive load switching drain ? source voltage slope vs. gate ? source voltage v gs (v) drain ? source voltage slope (v/ s) i d = 2.5 a v dd = 12 v r g = 0 ? dv ds /d t(on) dv ds /d t(off) time ( s) figure 18. resistive load switching time vs. gate resistance r g ( ) t f , (v gs = 10 v) t f , (v gs = 5 v) t d(off) , (v gs = 10 v) t r , (v gs = 5 v) t d(off) , (v gs = 5 v) t r , (v gs = 10 v) t d(on) , (v gs = 5 v) t d(on) , (v gs = 10 v) i d = 2.5 a v dd = 12 v dv ds /d t(off) , v gs = 5 v ? dv ds /d t(on) , v gs = 10 v ? dv ds /d t(on) , v gs = 5 v dv ds /d t(off) , v gs = 10 v figure 19. drain ? source voltage slope during turn on and turn off vs. gate resistance r g ( ) i d = 2.5 a v dd = 12 v 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1234567891 0 0 50 100 150 200 345678910 0.000 0.500 1.000 1.500 345678910 0 25 50 75 100 125 0 200 400 600 800 1000 1200 1400 1600 1800 2000 ? 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 500 1000 1500 20 0
ncv8405, NCV8405A http://onsemi.com 7 typical performance curves 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse 50% duty cycle 20% 10% 5% 2% 1% pulse width (sec) r ja 1? sq 1 oz copper figure 20. transient thermal resistance 0 20 40 60 80 100 120 140 0 100 200 300 400 500 600 700 copper heat spreader area (mm 2 ) ja ( c/w) figure 21. ja vs. copper ja curve with pcb cu thk 1.0 oz ja curve with pcb cu thk 2.0 oz t a 25 c
ncv8405, NCV8405A http://onsemi.com 8 test circuits and waveforms dut g d s rl vdd ids vin figure 22. resistive load switching test circuit rg + ? td(on) tr vin ids td(off) tf 10% 10% 90% 90% figure 23. resistive load switching waveforms
ncv8405, NCV8405A http://onsemi.com 9 test circuits and waveforms vdd ids vin l vds tp figure 24. inductive load switching test circuit dut g d s rg + ? 0 v 5 v t av vin ids vds t p v ds(on) i pk 0 vdd v (br)dss figure 25. inductive load switching waveforms
ncv8405, NCV8405A http://onsemi.com 10 ordering information device package shipping ? ncv8405stt1g sot ? 223 (pb ? free) 1000 / tape & reel NCV8405Astt1g sot ? 223 (pb ? free) 1000 / tape & reel ncv8405dtrkg dpak (pb ? free) 2500 / tape & reel ncv8405stt3g sot ? 223 (pb ? free) 4000 / tape & reel NCV8405Astt3g sot ? 223 (pb ? free) 4000 / tape & reel NCV8405Adtrkg dpak (pb ? free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncv8405, NCV8405A http://onsemi.com 11 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 3: pin 1. gate 2. drain 3. source 4. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
ncv8405, NCV8405A http://onsemi.com 12 package dimensions dpak (single gauge) case 369c issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ncv8405/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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